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  6. True Random Number Generation from Pre-Formed ReRAM Arrays

True Random Number Generation from Pre-Formed ReRAM Arrays

Description

This method describes how schemes generating cryptographic keys from arrays of pre-formed resistive random-access memory (ReRAM) cells (memristors) can also be used for the design of fast true random number generators (TRNGs) of exceptional quality while consuming low levels of electric power.

Additional information

Patent number and inventor

Patent Pending

Bertrand Cambou, Sareh Assiri, Michael Garrett, Saloni Jain, and Michael Partridge.

Potential applications

Cybersecurity applications.

Benefits and advantages

The natural randomness originates from the large stochastic cell-to-cell variations in resistance values at low injected currents in the pre-formed range. This novel TRNG scheme can be designed with three interconnected blocks: i) a pseudo-random number generator (PRNG) that is acting as an extended output function (XOF) to generate a stream of addresses pointing randomly at the array of ReRAM cells; ii) a method to read the resistance values of these cells at low injected current and convert the values in a stream of random bits; and, if needed, iii) methods to further enhance the randomness of this stream such as, but not limited to, mathematical, Boolean, and cryptographic algorithms. The natural stochastic properties of the ReRAM cells in the pre-forming range at low currents have been demonstrated by measuring a statistically significant number of cells.

Case number and licensing status

2021-028

This invention is available for licensing.